| DOI | Resolve DOI: https://doi.org/10.1016/j.physb.2014.03.084 |
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| Author | Search for: Mala, S. A.; Search for: Tsybeskov, L.; Search for: Lockwood, D. J.1; Search for: Wu, X.1; Search for: Baribeau, J. -M.2 |
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| Affiliation | - National Research Council Canada. Measurement Science and Standards
- National Research Council Canada. Information and Communication Technologies
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| Format | Text, Article |
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| Subject | Carrier recombination; Si/SiGe; Photoluminescence |
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| Abstract | Photoluminescence (PL) measurements were performed in Si/Si1-xGex nanostructures with a single Si0.92Ge0.08 nanometer-thick layer incorporated into Si/Si0.6Ge0.4 cluster multilayers. Under pulsed laser excitation, the PL decay associated with the Si0.92Ge0.08 nano-layer is found to be nearly a 1000 times faster compared to that in Si/Si0.6Ge0.4 cluster multilayers. A model considering Si/SiGe hetero-interface composition and explaining the fast and slow time-dependent recombination rates is proposed. |
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| Publication date | 2014-11-15 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21272952 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 2abb46bb-2fed-4a97-8fc7-460640ffc2fe |
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| Record created | 2014-12-03 |
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| Record modified | 2020-04-22 |
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