A route to low temperature growth of single crystal GaN on sapphire

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1039/C5TC01556A
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Name affiliation
  1. National Research Council of Canada. National Institute for Nanotechnology
FormatText, Article
Journal titleJournal of Materials Chemistry C
ISSN2050-7526
2050-7534
Volume3
Issue28
Pages7428–7436
Abstract
Gallium nitride (GaN) is considered one of most important semiconductor materials for the 21st century due to its combination of properties (high breakdown field, high electron saturation velocity and mobility, and good thermal conductivity) that make it suitable for high power, high frequency and high temperature applications. In this paper we demonstrate a possible route for the deposition of single crystal GaN on sapphire at 275 °C using plasma enhanced atomic layer deposition. TEM images and electron diffraction show that the first 5 nm of growth is epitaxial then transitions to 3D growth. The films have a preferential (002) growth direction, and a small in-plane and out-of-plane misorientation. The refractive index, extinction coefficient, and optical band gap are on par with those of GaN films grown at higher temperatures. The films are p-type with a carrier concentration of 1.68 × 10¹⁸ cm⁻³ and hole mobility of 110 cm² V⁻¹ s⁻¹.
Publication date
LanguageEnglish
Peer reviewedYes
NPARC number23000661
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Record created2016-08-18
Record modified2020-04-22
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