Properties of InAlP Native Oxides Suorting MOS Inversion-layer Behavior
Properties of InAlP Native Oxides Suorting MOS Inversion-layer Behavior
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Format | Text, Article |
Conference | 43rd Electronic Materials Conference, June 27-29 2001, Notre Dame, Indiana |
NPARC number | 12346233 |
Export citation | Export as RIS |
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Record identifier | 280608c4-8784-4d59-930a-f5c74ec9b2d4 |
Record created | 2009-09-17 |
Record modified | 2020-04-16 |
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