Download | - View final version: Electron g-factor determined for quantum dot circuit fabricated from (110)-oriented GaAs quantum well (PDF, 2.1 MiB)
|
---|
DOI | Resolve DOI: https://doi.org/10.1063/5.0086555 |
---|
Author | Search for: Nakagawa, T.; Search for: Lamoureux, S.1; Search for: Fujita, T.ORCID identifier: https://orcid.org/0000-0002-4678-3069; Search for: Ritzmann, J.ORCID identifier: https://orcid.org/0000-0003-3322-8602; Search for: Ludwig, A.ORCID identifier: https://orcid.org/0000-0002-2871-7789; Search for: Wieck, A. D.ORCID identifier: https://orcid.org/0000-0001-9776-2922; Search for: Oiwa, A.ORCID identifier: https://orcid.org/0000-0001-5599-5824; Search for: Korkusinski, M.1ORCID identifier: https://orcid.org/0000-0002-2238-336X; Search for: Sachrajda, A.1ORCID identifier: https://orcid.org/0000-0001-8770-8025; Search for: Austing, D. G.; Search for: Gaudreau, L.1ORCID identifier: https://orcid.org/0000-0002-1929-2715 |
---|
Affiliation | - National Research Council of Canada. Security and Disruptive Technologies
|
---|
Funder | Search for: Japan Society for the Promotion of Science; Search for: Core Research for Evolutional Science and Technology; Search for: Moonshot Research and Development Program; Search for: Asahi Glass Foundation; Search for: Deutsch-Französische Hochschule; Search for: Deutsche Forschungsgemeinschaft; Search for: Berlin Center for Machine Learning; Search for: National Research Council of Canada |
---|
Format | Text, Article |
---|
Subject | quantum wells; doping; electronic transport; electrical properties and parameters; spin-orbit interactions; hall effect; epitaxy; quantum dots; g-factor |
---|
Abstract | The choice of substrate orientation for semiconductor quantum dot circuits offers opportunities for tailoring spintronic properties such as g-factors for specific functionality. Here, we demonstrate the operation of a few-electron double quantum dot circuit fabricated from a (110)-oriented GaAs quantum well. We estimate the in-plane electron g-factor from the profile of the enhanced inter-dot tunneling (leakage) current near-zero magnetic field. Spin blockade due to Pauli exclusion can block inter-dot tunneling. However, this blockade becomes inactive due to hyperfine interaction mediated spin flip-flop processes between electron spin states and the nuclear spin of the host material. The g-factor of absolute value ∼0.1 found for a magnetic field parallel to the direction [1¯10] is approximately a factor of four lower than that for comparable circuits fabricated from a material grown on widely employed standard (001) GaAs substrates and is in line with reported values determined by purely optical means for quantum well structures grown on (110) GaAs substrates |
---|
Publication date | 2022-04-07 |
---|
Publisher | AIP Publishing |
---|
In | |
---|
Language | English |
---|
Peer reviewed | Yes |
---|
Export citation | Export as RIS |
---|
Report a correction | Report a correction (opens in a new tab) |
---|
Record identifier | 268c0f45-b08c-493b-992d-2195f5d1cd3c |
---|
Record created | 2022-04-12 |
---|
Record modified | 2023-03-16 |
---|