Electron g-factor determined for quantum dot circuit fabricated from (110)-oriented GaAs quantum well

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1063/5.0086555
AuthorSearch for: ; Search for: 1; Search for: ORCID identifier: https://orcid.org/0000-0002-4678-3069; Search for: ORCID identifier: https://orcid.org/0000-0003-3322-8602; Search for: ORCID identifier: https://orcid.org/0000-0002-2871-7789; Search for: ORCID identifier: https://orcid.org/0000-0001-9776-2922; Search for: ORCID identifier: https://orcid.org/0000-0001-5599-5824; Search for: 1ORCID identifier: https://orcid.org/0000-0002-2238-336X; Search for: 1ORCID identifier: https://orcid.org/0000-0001-8770-8025; Search for: ; Search for: 1ORCID identifier: https://orcid.org/0000-0002-1929-2715
Name affiliation
  1. National Research Council of Canada. Security and Disruptive Technologies
FunderSearch for: Japan Society for the Promotion of Science; Search for: Core Research for Evolutional Science and Technology; Search for: Moonshot Research and Development Program; Search for: Asahi Glass Foundation; Search for: Deutsch-Französische Hochschule; Search for: Deutsche Forschungsgemeinschaft; Search for: Deutsche Forschungsgemeinschaft; Search for: Berlin Center for Machine Learning; Search for: National Research Council Canada
FormatText, Article
Subjectquantum wells; doping; electronic transport; electrical properties and parameters; spin-orbit interactions; hall effect; epitaxy; quantum dots; g-factor
Abstract
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PublisherAIP Publishing
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LanguageEnglish
Peer reviewedYes
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Record identifier268c0f45-b08c-493b-992d-2195f5d1cd3c
Record created2022-04-12
Record modified2022-04-12
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