A comparison of the dc and rf characteristics of single and double InP/InGaAs heterojunction bipolar transistors
A comparison of the dc and rf characteristics of single and double InP/InGaAs heterojunction bipolar transistors
| DOI | Resolve DOI: https://doi.org/10.1139/p96-866 |
|---|---|
| Author | Search for: 1; Search for: 1; Search for: 1; Search for: 1; Search for: 1 |
| Affiliation |
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| Format | Text, Article |
| Publication date | 1996 |
| In | |
| Language | English |
| Peer reviewed | Yes |
| NPARC number | 12339038 |
| Export citation | Export as RIS |
| Report a correction | Report a correction (opens in a new tab) |
| Record identifier | 220545bc-583e-4ca4-97e5-3d5202b09741 |
| Record created | 2009-09-11 |
| Record modified | 2020-03-20 |
- Date modified: