Heavy and light hole minority carrier transport properties in low-doped n-InGaAs lattice matched to InP

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DOIResolve DOI: https://doi.org/10.1063/1.5002677
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Name affiliation
  1. National Research Council of Canada. Advanced Electronics and Photonics
  2. National Research Council of Canada. Information and Communication Technologies
FormatText, Article
Journal titleApplied Physics Letters
ISSN0003-6951
1077-3118
Volume111
Issue16
Article number162107
Pages# of pages: 5
Abstract
Minority carrier diffusion lengths in low-doped n-InGaAs using InP/InGaAs double-heterostructures are reported using a simple electrical technique. The contributions from heavy and light holes are also extracted using this methodology, including minority carrier mobilities and lifetimes. Heavy holes are shown to initially dominate the transport due to their higher valence band density of states, but at large diffusion distances, the light holes begin to dominate due to their larger diffusion length. It is found that heavy holes have a diffusion length of 54.5 ± 0.6 μm for an n-InGaAs doping of 8.4 × 1015 cm–3 at room temperature, whereas light holes have a diffusion length in excess of 140 μm. Heavy holes demonstrate a mobility of 692 ± 63 cm2/Vs and a lifetime of 1.7 ± 0.2 μs, whereas light holes demonstrate a mobility of 6200 ± 960 cm–2/Vs and a slightly longer lifetime of 2.6 ± 1.0 μs. The presented method, which is limited to low injection conditions, is capable of accurately resolving minority carrier transport properties.
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PublisherAIP Publishing
LanguageEnglish
Peer reviewedYes
NPARC number23002462
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Record created2017-11-14
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