Heavy and light hole minority carrier transport properties in low-doped n-InGaAs lattice matched to InP

From National Research Council Canada

Download
  1. (PDF, 1 MB)
DOIResolve DOI: https://doi.org/10.1063/1.5002677
AuthorSearch for: 1 ; Search for: 2 
Name affiliation
  1. National Research Council Canada. Advanced Electronics and Photonics
  2. National Research Council Canada. Information and Communication Technologies
FormatText
TypeArticle
Journal titleApplied Physics Letters
ISSN0003-6951
1077-3118
Volume111
Issue16
Article number162107
Pages# of pages: 5
Abstract
Publication date
PublisherAIP Publishing
LanguageEnglish
Peer reviewedYes
NPARC number23002462
Export citationExport as RIS
Report a correctionReport a correction
Record identifier1bc4fc43-ad56-4926-8a26-d88a522f76c7
Record created2017-11-14
Record modified2017-11-14
Date modified: