| DOI | Resolve DOI: https://doi.org/10.1109/IPC47351.2020.9252272 |
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| Author | Search for: Pitts, Oliver J.1; Search for: Walker, Alexandre W.1; Search for: Flueraru, Costel1; Search for: Storey, Craig1; Search for: SpringThorpe, Anthony J.1 |
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| Affiliation | - National Research Council Canada. Advanced Electronics and Photonics
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| Format | Text, Article |
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| Conference | 2020 IEEE Photonics Conference (IPC), September 28 - October 1, 2020, Vancouver, BC, Canada |
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| Physical description | 2 p. |
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| Subject | avalanche photodiodes (APDs); detectors; optical communications |
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| Abstract | We report suppression of sidewall leakage current by up to two orders of magnitude in InGaAs / InP mesa-type avalanche photodiodes with a p-type sidewall formed by Zn diffusion, compared to reference devices without a p-type sidewall on the same wafer. |
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| Publication date | 2020-09 |
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| Publisher | IEEE |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 1b5ccf6a-bac3-4556-8f8a-684b2e88ff58 |
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| Record created | 2022-05-10 |
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| Record modified | 2022-05-10 |
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