High performance zinc oxide thin film transistors through improved material processing and device design

From National Research Council Canada

DOIResolve DOI: http://doi.org/10.1115/IMECE2014-36941
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  1. NINT
TypeArticle
Proceedings titleASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE)
ConferenceASME 2014 International Mechanical Engineering Congress and Exposition, IMECE 2014, 14 November 2014 through 20 November 2014
ISBN9780791846445
Volume2B
Article number36941
SubjectCarrier concentration; Schottky barrier diodes; Thin films; Zinc oxide; Electron concentration; Free charge carriers; High-throughput method; Material processing; Poor crystallinity; Schottky barrier thin-film transistors; Solution-processing; Zinc oxide thin films; Thin film transistors
Abstract
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PublisherAmerican Society of Mechanical Engineers
LanguageEnglish
Peer reviewedYes
NPARC number21275458
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Record identifier1696b417-9c91-428c-9ef3-8c802ec99321
Record created2015-07-14
Record modified2016-05-09
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