| DOI | Resolve DOI: https://doi.org/10.1115/IMECE2014-36941 |
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| Author | Search for: Adl, Ahmad Hossein; Search for: Farsinezhad, Samira; Search for: Ma, Alex; Search for: Barlage, Douglas W.; Search for: Shankar, Karthik1 |
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| Affiliation | - National Research Council of Canada. National Institute for Nanotechnology
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| Format | Text, Article |
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| Conference | ASME 2014 International Mechanical Engineering Congress and Exposition, IMECE 2014, 14 November 2014 through 20 November 2014 |
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| Subject | Carrier concentration; Schottky barrier diodes; Thin films; Zinc oxide; Electron concentration; Free charge carriers; High-throughput method; Material processing; Poor crystallinity; Schottky barrier thin-film transistors; Solution-processing; Zinc oxide thin films; Thin film transistors |
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| Abstract | Solution processing (SP) is a cheap, simple and highthroughput method for the fabrication of ZnO thin film transistors (TFTs). Lack of enhancement mode operation, poor crystallinity, traps, and poor control of the carrier concentration are some of the disadvantages of this method. The high intrinsic electron concentration of SP-ZnO makes saturation of TFTs non-trivial. We report on Schottky barrier thin film transistors (SB-TFT). By biasing the source Schottky contact in reverse bias, a depletion region is formed around the source contact hence depleting the region from the free charge carriers which produces the saturation of the device. The effect of the Schottky contact is illustrated by comparing the operation of SB-TFTs with that of conventional TFTs. |
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| Publication date | 2014-11-14 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21275458 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 1696b417-9c91-428c-9ef3-8c802ec99321 |
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| Record created | 2015-07-14 |
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| Record modified | 2020-04-22 |
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