High performance zinc oxide thin film transistors through improved material processing and device design

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1115/IMECE2014-36941
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: 1
Name affiliation
  1. National Research Council of Canada. National Institute for Nanotechnology
FormatText, Article
ConferenceASME 2014 International Mechanical Engineering Congress and Exposition, IMECE 2014, 14 November 2014 through 20 November 2014
SubjectCarrier concentration; Schottky barrier diodes; Thin films; Zinc oxide; Electron concentration; Free charge carriers; High-throughput method; Material processing; Poor crystallinity; Schottky barrier thin-film transistors; Solution-processing; Zinc oxide thin films; Thin film transistors
Publication date
Peer reviewedYes
NPARC number21275458
Export citationExport as RIS
Report a correctionReport a correction (opens in a new tab)
Record identifier1696b417-9c91-428c-9ef3-8c802ec99321
Record created2015-07-14
Record modified2020-04-22
Date modified: