High performance zinc oxide thin film transistors through improved material processing and device design

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1115/IMECE2014-36941
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  1. National Research Council of Canada. National Institute for Nanotechnology
FormatText, Article
ConferenceASME 2014 International Mechanical Engineering Congress and Exposition, IMECE 2014, 14 November 2014 through 20 November 2014
SubjectCarrier concentration; Schottky barrier diodes; Thin films; Zinc oxide; Electron concentration; Free charge carriers; High-throughput method; Material processing; Poor crystallinity; Schottky barrier thin-film transistors; Solution-processing; Zinc oxide thin films; Thin film transistors
Publication date
Peer reviewedYes
NPARC number21275458
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Record identifier1696b417-9c91-428c-9ef3-8c802ec99321
Record created2015-07-14
Record modified2020-04-22
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