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Effect of emitter design on the dc characteristics of InP-based double-heterojunction bipolar transistors

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1088/0268-1242/16/3/309
AuthorSearch for: ; Search for: 1; Search for: 1; Search for: ; Search for: 1
Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Publication date
In
  • Semiconductor Science and Technology 16, no. 3 (2001): 171–175.
NPARC number12744754
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Record identifier14a748bf-39ea-4603-9392-07c71cd5184c
Record created2009-10-27
Record modified2020-03-27
Date modified: