| Download | - View accepted manuscript: Structure and thermal stability of MOCVD ZrO2 films on Si (1 0 0) (PDF, 780 KiB)
|
|---|
| DOI | Resolve DOI: https://doi.org/10.1016/S0022-0248(03)00827-3 |
|---|
| Author | Search for: Wu, X.1; Search for: Landheer, D.1; Search for: Graham, M. J.1; Search for: Chen, H. -W.; Search for: Huang, T. -Y.; Search for: Chao, T. -S. |
|---|
| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
|
|---|
| Format | Text, Article |
|---|
| Subject | interfaces; transmission electron microscopy; metalorganic chemical vapor deposition; dielectric materials |
|---|
| Abstract | The structure and thermal stability of ZrO2 films grown on Si (1 0 0) substrates by metalorganic chemical vapor deposition have been studied by high-resolution transmission electron microscopy, selected area electron diffraction and X-ray energy dispersive spectroscopy. As-deposited films consist of tetragonal ZrO2 nanocrystallites and an amorphous Zr silicate interfacial layer. After annealing at 850°C, some monoclinic phase is formed, and the grain size is increased. Annealing a ∼6 nm thick film at 850°C in O2 revealed that the growth of the interfacial layer is at the expense of the ZrO2 layer. In a 3.0 nm thick Zr silicate interfacial layer, there is a 0.9 nm Zr-free SiO2 region right above the Si substrate. These observations suggest that oxygen reacted with the Si substrate to grow SiO2, and SiO2 reacted with ZrO2 to form a Zr silicate interfacial layer during the deposition and annealing. Oxygen diffusion through the tetragonal ZrO2 phase was found to be relatively easier than through the monoclinic phase. |
|---|
| Publication date | 2003-04 |
|---|
| In | |
|---|
| Language | English |
|---|
| NPARC number | 12744381 |
|---|
| Export citation | Export as RIS |
|---|
| Report a correction | Report a correction (opens in a new tab) |
|---|
| Record identifier | 124c559a-94e1-4397-bb76-a1c5c50b3b12 |
|---|
| Record created | 2009-10-27 |
|---|
| Record modified | 2020-04-02 |
|---|
