| Download | - View erratum: Inscription of lateral superlattices in semiconductors using structured light (PDF, 683 KiB)
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| DOI | Resolve DOI: https://doi.org/10.1063/5.0102432 |
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| Author | Search for: Hnatovsky, C.1; Search for: Zudov, M. A.; Search for: Austing, D. G.; Search for: Bogan, A.1; Search for: Mihailov, S. J.1ORCID identifier: https://orcid.org/0000-0002-6144-0937; Search for: Hilke, M.ORCID identifier: https://orcid.org/0000-0002-2604-9377; Search for: West, K. W.; Search for: Pfeiffer, L. N.; Search for: Studenikin, S. A.1ORCID identifier: https://orcid.org/0000-0002-7712-7187 |
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| Affiliation | - National Research Council Canada. Security and Disruptive Technologies
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| Funder | Search for: Gordon and Betty Moore Foundation; Search for: National Science Foundation MRSEC; Search for: M. A. Z. acknowledges support by the NSF |
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| Format | Text, Article |
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| Physical description | 8 p. |
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| Abstract | We propose a non-destructive, all-optical technique to imprint embedded lateral superlattices near semiconductor heterostructures by illuminating the samples with a stable interference pattern generated by a phase diffraction grating. We demonstrate the technique on an ultrahigh mobility GaAs/AlGaAs sample with a Si δ-doping by inducing a persistent charge redistribution at cryogenic temperatures in the doping layer containing DX-centers. Weiss commensurability oscillations in the magnetoresistance of the light-induced superlattice are observed and analyzed to obtain its characteristics. |
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| Publication date | 2022-07-28 |
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| Publisher | AIP Publishing |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 10e5e072-2565-48f4-909b-04130f345b52 |
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| Record created | 2022-10-07 |
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| Record modified | 2024-02-20 |
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