Download | - View erratum: Inscription of lateral superlattices in semiconductors using structured light (PDF, 683 KiB)
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DOI | Resolve DOI: https://doi.org/10.1063/5.0102432 |
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Author | Search for: Hnatovsky, C.1; Search for: Zudov, M. A.; Search for: Austing, D. G.; Search for: Bogan, A.1; Search for: Mihailov, S. J.1ORCID identifier: https://orcid.org/0000-0002-6144-0937; Search for: Hilke, M.ORCID identifier: https://orcid.org/0000-0002-2604-9377; Search for: West, K. W.; Search for: Pfeiffer, L. N.; Search for: Studenikin, S. A.1ORCID identifier: https://orcid.org/0000-0002-7712-7187 |
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Affiliation | - National Research Council of Canada. Security and Disruptive Technologies
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Funder | Search for: Gordon and Betty Moore Foundation; Search for: National Science Foundation MRSEC; Search for: M. A. Z. acknowledges support by the NSF |
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Format | Text, Article |
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Physical description | 8 p. |
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Abstract | We propose a non-destructive, all-optical technique to imprint embedded lateral superlattices near semiconductor heterostructures by illuminating the samples with a stable interference pattern generated by a phase diffraction grating. We demonstrate the technique on an ultrahigh mobility GaAs/AlGaAs sample with a Si δ-doping by inducing a persistent charge redistribution at cryogenic temperatures in the doping layer containing DX-centers. Weiss commensurability oscillations in the magnetoresistance of the light-induced superlattice are observed and analyzed to obtain its characteristics. |
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Publication date | 2022-07-28 |
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Publisher | AIP Publishing |
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In | |
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Language | English |
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Peer reviewed | Yes |
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Export citation | Export as RIS |
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Report a correction | Report a correction (opens in a new tab) |
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Record identifier | 10e5e072-2565-48f4-909b-04130f345b52 |
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Record created | 2022-10-07 |
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Record modified | 2024-02-20 |
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