Low-temperature molecular beam epitaxial growth of GaAs and (Ga,Mn)As

DOI	Resolve DOI: https://doi.org/10.1016/S0022-0248(98)01447-X
Author	Search for: Shen, A.; Search for: Matsukura, F.; Search for: Guo, S. P.; Search for: Sugawara, Y.; Search for: Ohno, H.; Search for: Tani, M.; Search for: Abe, H.; Search for: Liu, H. C.¹
Affiliation	National Research Council of Canada. NRC Institute for Microstructural Sciences
Format	Text, Article
Subject	molecular beam epitaxy; low-temperature growth; III–V semiconductor; diluted magnetic semiconductor; Transient reflectivity; (Ga,Mn)As
Abstract	GaAs and (Ga,Mn)As were grown by low-temperature (LT) MBE. In this paper we report the growth condition dependence of properties of LT GaAs and (Ga,Mn)As. Transient reflectivity measurements showed that the carrier lifetime in LT GaAs can be modified by changing the V/III ratio. The Curie temperature of (Ga,Mn)As, determined by magneto-transport measurements, was also shown to be a function of V/III ratio.
Publication date	1999-05
In	Journal of Crystal Growth 201-202 (May 1999): 679–683.
Language	English
NPARC number	12338201
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Record identifier	0c476993-fdc8-4a9a-a484-80d2ccbe3dc9
Record created	2009-09-10
Record modified	2020-03-20