| DOI | Resolve DOI: https://doi.org/10.1063/1.117963 |
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| Author | Search for: Sengupta, D. K.; Search for: Jackson, S. L.; Search for: Ahmari, D.; Search for: Kuo, H. C.; Search for: Malin, J. I.; Search for: Thomas, S.; Search for: Feng, M.; Search for: Stillman, G. E.; Search for: Chang, Y. C.; Search for: Li, L.1; Search for: Liu, H. C.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | Photodetectors; Gallium Arsenides; Indium Arsenides; Indium Phosphides; Quantum Wells; Infrared Radiation; Molecular Beam Epitaxy; Photoconductivity; Photodetectors (including infrared and CCD detectors); Imaging detectors and sensors; III-V semiconductors |
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| Abstract | Lattice-matched InGaAs/InP quantum well intersubband photodetectors (QWIPs) have been grown on an InP substrate by gas source molecular beam epitaxy. Detection at 4.55 μm was observed for a narrow well p-type InGaAs QWIP which, when complimented by a high responsivity 8.93 μm n-type InGaAs/InP QWIP, demonstrates the possibility of dual band, monolithically integrated QWIPs on the same InP substrate. Theoretical calculations of the photocurrent spectra are in excellent agreement with the experimental data. |
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| Publication date | 1996-11-18 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 12337971 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 0c00e236-045a-4efd-9f92-f743959cdff9 |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-20 |
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