| Abstract | HgTe plates have been grown by vapor phase epitaxy on (111) SrTiO3 substrates with a preferred orientation in the (111) crystalline direction, as indicated by x-ray diffraction. Examination of the plates using the micro-Raman mapping shows that the HgTe plates exhibit unusual strain patterns: the Raman peaks from the transverse-optical and longitudinal-optical phonons for the thicker (central) parts of the HgTe plates are at the same frequency as that of the bulk HgTe, while the Raman peaks for the thinner parts of the HgTe plates, which surround the thicker parts and can hardly be seen in a scanning electron microscope, are significantly larger in frequency. The full width at half maximum is smaller in the thinner areas than in the thicker parts. Theoretical analysis shows that the HgTe plates on SrTiO3 substrates suffer from compressive stress, and this may be sufficient to induce the three-dimensional topological insulator behavior in HgTe. |
|---|
