Strained HgTe plates grown on SrTiO3 investigated by micro-Raman mapping

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1063/1.4962852
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Name affiliation
  1. National Research Council of Canada. Measurement Science and Standards
FormatText, Article
Journal titleJournal of Applied Physics
ISSN0021-8979
1089-7550
Volume120
Issue11
Pages115304-1–115304-6
Abstract
HgTe plates have been grown by vapor phase epitaxy on (111) SrTiO3 substrates with a preferred orientation in the (111) crystalline direction, as indicated by x-ray diffraction. Examination of the plates using the micro-Raman mapping shows that the HgTe plates exhibit unusual strain patterns: the Raman peaks from the transverse-optical and longitudinal-optical phonons for the thicker (central) parts of the HgTe plates are at the same frequency as that of the bulk HgTe, while the Raman peaks for the thinner parts of the HgTe plates, which surround the thicker parts and can hardly be seen in a scanning electron microscope, are significantly larger in frequency. The full width at half maximum is smaller in the thinner areas than in the thicker parts. Theoretical analysis shows that the HgTe plates on SrTiO3 substrates suffer from compressive stress, and this may be sufficient to induce the three-dimensional topological insulator behavior in HgTe.
Publication date
LanguageEnglish
Peer reviewedYes
NPARC number23000799
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