Low RF noise and power loss for ion-implanted Si having an improved implantation process
Low RF noise and power loss for ion-implanted Si having an improved implantation process
| DOI | Resolve DOI: https://doi.org/10.1109/LED.2002.807027 |
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| Author | Search for: ; Search for: ; Search for: 1; Search for: ; Search for: ; Search for: ; Search for: ; Search for: |
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| Format | Text, Article |
| Publication date | 2003 |
| In | |
| NPARC number | 12744651 |
| Export citation | Export as RIS |
| Report a correction | Report a correction (opens in a new tab) |
| Record identifier | 095580ae-90a8-45b1-aafb-1c81697acee6 |
| Record created | 2009-10-27 |
| Record modified | 2020-04-02 |
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