| DOI | Resolve DOI: https://doi.org/10.1016/0168-583X(95)00752-0 |
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| Author | Search for: Charbonneau, S.1; Search for: Poole, P. J.1; Search for: Piva, P. G.1; Search for: Buchanan, M.1; Search for: Goldberg, R. D.; Search for: Mitchell, I. V. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | Ninth International Conference on Ion Beam Modification of Materials (IBMM'95), February 5-10, 1995, Canberra, Australia |
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| Abstract | Ion implantation induced Quantum Well (QW) intermixing using high energies (2 to 8 MeV As⁺ and P⁺) has been shown to be an effective technique for achieving spatially selective tuning of QW laser structures (InGaAs/GaAs and InGaAs/InP). Work illustrating the effects of ion dose, energy, current density and implant temperature is presented for the InGaAs/GaAs QW laser structure, using photoluminescence as a diagnostic tool to help optimise these parameters. This work is then extended to the InGaAs/InP QW laser structure where significant differences are observed, in particular concerning the ion implantation depth relative to the depth of the QWs. |
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| Publication date | 1995-12-02 |
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| In | |
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| Language | English |
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| NPARC number | 12329126 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 05cb872e-e873-410c-ac01-79d025c4a6cf |
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| Record created | 2009-09-10 |
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| Record modified | 2020-04-29 |
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