Intense photoluminescence between 1.3 and 1.8 µm from strained Si[1-x]Ge[x] alloys
Intense photoluminescence between 1.3 and 1.8 µm from strained Si[1-x]Ge[x] alloys
| DOI | Resolve DOI: https://doi.org/10.1063/1.103558 |
|---|---|
| Author | Search for: ; Search for: ; Search for: ; Search for: |
| Format | Text, Article |
| Publication date | 1990-09-03 |
| In | |
| Language | English |
| NRC number | NRC-INMS-1129 |
| NPARC number | 8896417 |
| Export citation | Export as RIS |
| Report a correction | Report a correction (opens in a new tab) |
| Record identifier | 04f391c8-dceb-48c8-af8b-d10cb9f2b238 |
| Record created | 2009-04-22 |
| Record modified | 2020-03-17 |
- Date modified: