| DOI | Resolve DOI: https://doi.org/10.1139/p96-854 |
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| Author | Search for: McAlister, S. P.1; Search for: McKinnon, W. R.1; Search for: Bradford, T.1 |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | Simulations of the current distributions in Si–Ge p–MOSFETs are presented for Si–Ge channel designs that have a triangular or a uniform Ge profile. The distributions of current show why the triangular design is better than the uniform Ge profile. Contributions to the transconductance in both designs are dominated by the Si–Ge channel in the −0.5 to −1.5 V gate-voltage range but the contribution to the device performance from the current parallel to the top oxide/Si interface dominates the response by −2.5 V. |
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| Publication date | 1996-03-01 |
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| In | |
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| Language | English |
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| NPARC number | 12328313 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 02eccaba-e17f-4509-accd-d5d80c628c7d |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-20 |
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