| DOI | Resolve DOI: https://doi.org/10.1063/1.1492306 |
|---|
| Author | Search for: Boukherroub, Rabah1; Search for: Wayner, Danial D. W.1; Search for: Lockwood, David J.2 |
|---|
| Affiliation | - National Research Council Canada
- National Research Council Canada. NRC Institute for Microstructural Sciences
|
|---|
| Format | Text, Article |
|---|
| Subject | silicon; elemental semiconductors; porous semiconductors; photoluminescence; oxidation; anodisation; organic compounds; surface chemistry; infrared spectra; raman spectra; passivation; anodizing; electrochemical oxidation; hydrogen bonds; infrared spectra; porosity; porous materials; porous silicon; semiconductors (materials); surface reactions; surface treatment |
|---|
| Abstract | Electrochemical oxidation of porous silicon (PSi) produces a surface that is covered with native silicon–hydrogen (Si–Hx) bonds and regions with oxidized Si–Si back-bonds (OSi–Hx). Such anodically oxidized PSi layers were chemically modified using 1-decene under thermal conditions. The hydrosilylation reaction consumes mainly the nonoxidized Si–Hx bonds and yields a surface with oxidized and alkylated regions that were characterized using transmission IR and Raman spectroscopies. The brightest photoluminescence (PL) was obtained when the PSi sample was anodized in 1 M sulfuric acid (H₂SO₄) at 3 mA/cm² for 5 min. The chemical process preserves the PL and the physical properties of the porous layer. The derivatized PSi surfaces are stable in boiling CCl4 and in water. |
|---|
| Publication date | 2002-07 |
|---|
| In | |
|---|
| Language | English |
|---|
| Peer reviewed | Yes |
|---|
| NPARC number | 12744334 |
|---|
| Export citation | Export as RIS |
|---|
| Report a correction | Report a correction (opens in a new tab) |
|---|
| Record identifier | 01e98361-db0a-4c0e-8b64-d4f727a8850b |
|---|
| Record created | 2009-10-27 |
|---|
| Record modified | 2020-03-30 |
|---|
