| DOI | Resolve DOI: https://doi.org/10.1109/3.502380 |
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| Author | Search for: Liu, H. C.1; Search for: Li, Jianmeng1; Search for: Buchanan, M.1; Search for: Wasilewski, Z. R.1 |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | 234 to 466 A; 30 GHz; 5 to 6 ps; barrier thicknesses; frequency response; high-biasing field regime; high-frequency capability; high-frequency quantum-well infrared photodetectors; infrared detectors; intrinsic photoconductive lifetime; microwave measurement; microwave-rectification technique; packaged detectors; photoconducting devices; photodetectors; quantum-well infrared photodetectors; rectification; semiconductor quantum wells |
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| Abstract | We explore the high-frequency capability of quantum-well infrared photodetectors using a microwave-rectification technique. We characterize a variety of devices with barrier thicknesses from 234 to 466 Å and number of wells from 4 to 32. Our packaged detectors have a relatively flat frequency response up to about 30 GHz. These experiments indicate that the intrinsic photoconductive lifetime for these devices in the high-biasing field regime is in the range of 5-6 ps. |
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| Publication date | 1996-06-01 |
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| In | |
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| Language | English |
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| NPARC number | 12328348 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 0103c132-1df2-4f93-9e1c-9ba675033316 |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-20 |
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